DocumentCode :
445346
Title :
Electronic polarization effects on capacitance-voltage characteristics of metal-SiO/sub 2/-thin film organic semiconductor devices
Author :
Gunther, Norman ; Niemann, Darrell ; Barycza, Mark ; Kwong, Charles ; Rahman, Mahmud
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., CA
Volume :
1
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
111
Lastpage :
112
Abstract :
Recently thin film organic semiconductor (OS) materials such as poly-phenylene-vinylene (PPV), pentacene, etc., have attracted the attention of researchers for use in low cost alternatives to existing silicon applications including RFDDs as well as promising new frontiers such as flexible electronic displays. Typically, these films exhibit strong anisotropic electronic polarization effects and possess conduction properties similar to those in p-type amorphous silicon. The capacitance-voltage characteristic can be considered as one of the effective tools for investigating electronic polarization effects on the performance of devices using such films
Keywords :
organic semiconductors; polarisation; semiconductor thin films; silicon compounds; RFDD; SiO2; anisotropic electronic polarization effects; capacitance-voltage characteristics; p-type amorphous silicon; thin film organic semiconductor devices; Capacitance-voltage characteristics; Conducting materials; Costs; Optical polarization; Organic materials; Organic semiconductors; Pentacene; Semiconductor films; Semiconductor materials; Semiconductor thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553080
Filename :
1553080
Link To Document :
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