Title :
Time and temperature dependence of the drain current of PF-based OFETs
Author :
Hamilton, Michael C. ; Kanicki, Jerzy
Keywords :
Frequency; Indium tin oxide; Insulation; Lighting; Molecular electronics; OFETs; Stress measurement; Temperature dependence; Thermal stresses; Threshold voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553093
