DocumentCode
445365
Title
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Author
Cai, Yong ; Zhou, Yugang ; Chen, Kevin J. ; Lau, Kei May
Volume
1
fYear
2005
fDate
June 20-22, 2005
Firstpage
179
Lastpage
180
Keywords
Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma devices; Plasma sources; Rapid thermal annealing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553110
Filename
1553110
Link To Document