Title :
Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/
Author :
Boutros, K.S. ; Luo, W.B. ; Shinohara, K.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA
Abstract :
In this work, we report on vertically scaled, 100nm gate-length Al 0.31Ga0.69N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an fT of 125 GHz and an f max (Ug) of 174 GHz. Careful device design and unique process features also resulted in a high peak Gm,ext of 498 mS/mm, an Idss of 1.2A/mm, and a gate-to-drain breakdown of 30V
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 100 nm; 125 GHz; 174 GHz; 30 V; AlGaN-GaN; HEMT; T-Gate; gate to drain breakdown; vertically scaled; Aluminum gallium nitride; Contracts; Cutoff frequency; Delay effects; Fabrication; Frequency response; Gallium nitride; HEMTs; MODFETs; Physics;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553112
