Title :
Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs
Author :
Rhee, Se Jong ; Kim, Hyoung-Sub ; Kang, Chang Yong ; Choi, Chang Hwan ; Akbar, M.S. ; Zhang, Manhong ; Lee, Tackwhi ; Ok, Injo ; Zhu, Feng ; Krishnan, Siddarth A. ; Lee, Jack C.
Author_Institution :
Microelectron. Res. Center, Texas Univ.
Abstract :
New structural approach of Gd2O3 incorporated HfO2 multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd2O3 with bottom HfO2 bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd2O 3/HfO2 dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO2. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd2O3/HfO2 are observed
Keywords :
MOSFET; dielectric materials; gadolinium compounds; hafnium compounds; high-k dielectric thin films; leakage currents; Gd2O3-HfO2; MOSFET; bilayer dielectric; channel electron mobility; gadolinium; leakage current; output current; transconductance; Conducting materials; Electric variables; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Thermal stability; Transconductance;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553128
