Title :
In/sub 0.53/Ga/sub 0.47/As/InP type-I DHBTs having 450 GHz f/sub T/ and GHz f/sub max/ w/C/sub cb/I/sub c/ = 0.38 ps/V
Author :
Griffith, Zach ; Rodwell, Mark J. W. ; Xiao-Ming Fang ; Loubychev, Dmitri ; Ying Wu ; Fastenau, Joel M. ; Liu, Amy W. K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Abstract :
The paper reports on InP/In0.53Ga0.47As /InP DHBTs fabricated using a conventional mesa structure, exhibiting a 450 GHz ftau and 490 GHz fmax, which is to our knowledge the highest simultaneous ftau and fmaxfor a mesa HBT. The collector has been scaled vertically to 120 nm for reduced electron collector transit time, aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors, and the base and emitter contact resistances rhoc have been reduced. The device reported here employs a 30 nm highly doped InGaAs base and an InGaAs/InAlAs superlattice base-collector grade
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; wide band gap semiconductors; 120 nm; 30 nm; 450 GHz; 490 GHz; DHBT; InGaAs-InAlAs; InP-In0.53Ga0.47As-InP; contact resistance reduction; electron collector transit time reduction; mesa structure; thin collector; Circuit synthesis; Coupling circuits; Doping; Double heterojunction bipolar transistors; Frequency; Indium gallium arsenide; Indium phosphide; Logic circuits; Logic design; Logic devices;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553150
