High performance low power 6.0 A HBT devices and circuits

Author

Monier, C. ; Cavus, A. ; Sandhu, R. ; Li, D. ; Nam, P. ; Chan, B. ; Oshiro, A. ; Matheson, D. ; Gutierrez-Aitken, A.

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

267

Lastpage

268

Abstract

In bipolar logic circuits, the use of a narrow band gap In_xGa_1-xAs system with high indium content (80 < x < 100) materials in the base layer will primarily impact the device turn-on voltage V_BE that could be reduced by half compared to conventional III-V technologies. This will directly translate to lower supply voltage in digital applications. This paper discusses device technology for bipolar circuit applications based on material systems with lattice parameter towards that of InAs

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; low-power electronics; microwave bipolar transistors; millimetre wave bipolar transistors; narrow band gap semiconductors; 60 Aring; HBT circuits; HBT devices; In_0.86Al_0.14As-In_0.86Ga_0.14As; In_xGa_1-xAs; bipolar logic circuits; device technology; material systems; narrow band gap system; Buffer layers; Circuits; Heterojunction bipolar transistors; Indium phosphide; Lattices; Narrowband; Rough surfaces; Surface morphology; Surface roughness; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553151

Filename

1553151