DocumentCode
44547
Title
Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits
Author
Scheick, Leif
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
61
Issue
6
fYear
2014
fDate
Dec. 2014
Firstpage
2881
Lastpage
2888
Abstract
Characterization of destructive single-event effects in enhancement mode gallium nitride high electron mobility transistors is presented as related to the optimal application of and operating conditions for power management circuits. A mechanism for the phenomenon is also presented.
Keywords
III-V semiconductors; gallium compounds; power HEMT; wide band gap semiconductors; GaN; destructive single-event effect; enhancement mode gallium nitride HEMT; high electron mobility transistor; power distribution circuit; Capacitance; Gallium nitride; HEMTs; MODFETs; Radiation effects; Threshold voltage; Buck regulator; gallium nitride; single-event effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2365545
Filename
6957621
Link To Document