Investigation of thermally activated charging effects in RF-MEMS switches

Author

Exarchos, M. ; Theonas, V. ; Papaioannou, G.J. ; Constantinidis, G. ; Psychias, S. ; Vasilache, D. ; Dragoman, M. ; Muller, A. ; Neculoiu, D.

Author_Institution

Dept. of Phys., Athens Univ., Greece

Volume

1

fYear

2005

fDate

3-5 Oct. 2005

Firstpage

175

Abstract

The paper presents the investigation of the temperature dependence of the charging mechanism in RF-MEMS switch insulating layer. The accumulated charge kinetics has been monitored through the transient response of the device capacitance. The transient response is shown to follow rather a stretched exponential law than an exponential one. The time scale of the process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot. This allows the determination of the time constant of the contributing mechanism at room temperature.

Keywords

electric charge; microswitches; transient response; 293 to 298 K; Arrhenius plot; RF-MEMS switch insulating layer; activation energy; charge kinetics; device capacitance transient response; exponential law; thermally activated charging effects; Bridge circuits; Capacitance; Dielectric devices; Electrodes; Micromechanical devices; Physics; Radiofrequency microelectromechanical systems; Switches; Temperature dependence; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558740

Filename

1558740