DocumentCode
446652
Title
Study of InGaN self-assembled quantum dots with interruption growth by metal organic chemical vapor deposition
Author
Yao, H.H. ; Huang, G.S. ; Chen, C.Y. ; Liang, W.D. ; Kuo, H.C. ; Wang, S.C.
fYear
2005
fDate
38544
Firstpage
139
Lastpage
140
Keywords
Atom optics; Buffer layers; Chemical vapor deposition; Gallium nitride; MOCVD; Optical buffering; Optical microscopy; Organic chemicals; Quantum dots; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2005. International
Print_ISBN
0-7803-9240-X
Type
conf
DOI
10.1109/IQEC.2005.1560851
Filename
1560851
Link To Document