DocumentCode
446931
Title
Analysis of drain-to-body band-to-band tunneling in double gate MOSFET
Author
Ananthan, Hari ; Bansal, Aditya ; Roy, Kaushik
Author_Institution
Dept. of ECE, Purdue Univ., West Lafayette, IN, USA
fYear
2005
fDate
3-6 Oct. 2005
Firstpage
159
Lastpage
160
Abstract
An analytical model is proposed for drain-to-body band-to-band tunneling leakage in nanoscale symmetric and asymmetric double-gate MOS devices. The model is used to analyze the impact of technology and circuit parameters, and suggest ways of minimizing this leakage.
Keywords
MOSFET; semiconductor device models; tunnelling; asymmetric double-gate MOS devices; double gate MOSFET; drain-to-body band-to-band tunneling; nanoscale symmetric double-gate MOS devices; tunneling leakage; Analytical models; CMOS technology; Circuit simulation; MOS devices; MOSFET circuits; Nanoscale devices; Predictive models; Semiconductor process modeling; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2005. Proceedings. 2005 IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-9212-4
Type
conf
DOI
10.1109/SOI.2005.1563573
Filename
1563573
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