Research of Single-Event Burnout in Power Planar VDMOSFETs by Localized Carrier Lifetime Control

Author

Cheng-Hao Yu ; Ying Wang ; Fei Cao ; Li-Lian Huang ; Yu-Ye Wang

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

62

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

143

Lastpage

148

Abstract

This paper presents 2-D numerical simulation results of single-event burnout (SEB) in power planar vertical double-diffused MOSFET (VDMOSFET) with localized carrier lifetime control. A low carrier lifetime control region (LCLCR) is introduced to accelerate the recombination rate of the generated holes caused by an ion´s impact. The optimal localized range with LCLCR in epitaxial layer has been investigated. The SEB inhibition mechanism with LCLCR is analyzed and discussed. A VDMOSFET with localized LCLCR can operate like a normal VDMOSFET and can have improved SEB performance effectively. In addition, the leakage current density in breakdown characteristics of VDMOSFET is studied based on the variation of carrier lifetime.

Keywords

carrier lifetime; electron-hole recombination; ion beam effects; power MOSFET; radiation hardening (electronics); 2D numerical simulation; electron-hole recombination; hole generation; ion impact; localized carrier lifetime control; low carrier lifetime control region; power planar VDMOSFET; power planar vertical double diffused MOSFET; single event burnout; Charge carrier lifetime; Leakage currents; Logic gates; MOSFET; Performance evaluation; Semiconductor optical amplifiers; Threshold voltage; Low carrier lifetime control region (LCLCR); numerical simulation; power vertical double-diffused MOSFET (VDMOSFET); single-event burnout (SEB); single-event burnout (SEB).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2365817

Filename

6960023