DocumentCode
447774
Title
Infrared absorption spectrum of magnesium double donors in silicon
Author
Ho, L.T.
Author_Institution
Inst. of Phys., Acad. Sinica, Taipei, Taiwan
Volume
1
fYear
2005
fDate
19-23 Sept. 2005
Firstpage
170
Abstract
It is well known that magnesium behaves likes an interstitial double donor in silicon and the ionization energies at liquid helium temperature are 107.50 and 256.47 meV for neutral and singly ionized magnesium donors, respectively. Recently, we have found several spectral lines unobserved before from the high-resolution infrared absorption spectra of magnesium-doped silicon measured at liquid helium temperature demonstrating the existence of other neutral and singly ionized magnesium donors in silicon. Compared with the well known donors mentioned previously, they are shallower donors with smaller ionization energies. Our study clearly indicates that there are multiple neutral and singly ionized magnesium donors in silicon. We have also observed some unusual spectra surprisingly inconsistent with typical donor spectra in silicon.
Keywords
elemental semiconductors; impurity absorption spectra; impurity states; infrared spectra; ionisation; magnesium; semiconductor doping; silicon; 107.50 meV; 256.47 meV; high-resolution infrared absorption spectra; infrared absorption spectrum; interstitial double donor; ionization energy; magnesium double donors; magnesium-doped silicon; neutral ionized magnesium donors; semiconductor doping; singly ionized magnesium donors; spectral lines; Chemical elements; Electromagnetic wave absorption; Helium; Impurities; Infrared spectra; Ionization; Magnesium; Silicon; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN
0-7803-9348-1
Type
conf
DOI
10.1109/ICIMW.2005.1572462
Filename
1572462
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