Stability of preamplifier in 84-116 GHz receiver

Author

Jiang, N. ; Claude, S. ; Wood, I. ; Niranjanan, P. ; Garcia, D. ; Yeung, K. ; Dindo, P. ; Szeto, K. ; Welle, P. ; Rodrigues, G. ; Derdall, D. ; Erickson, D. ; Duncan, D. ; Leckie, B. ; Pfleger, M.

Author_Institution

Herzberg Inst. of Astrophys., Nat. Res. Council, Victoria, BC, Canada

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

205

Abstract

The stability of InP HEMTs preamplifiers has been investigated in time and frequency domains at various cryogenic temperatures. It achieved a gain fluctuation of 5×10^-6/√ Hz and an Allan time of 9 seconds at 4 GHz bandwidth. The stability of a sideband separating (2SB) mixer receiver is tested with the IF (4-8 GHz) preamplifier at 4 K.

Keywords

III-V semiconductors; circuit stability; cryogenic electronics; frequency-domain analysis; high electron mobility transistors; indium compounds; millimetre wave mixers; millimetre wave receivers; preamplifiers; time-domain analysis; 4 K; 4 to 8 GHz; 84 to 116 GHz; 9 sec; HEMT preamplifiers; InP; cryogenic temperatures; frequency domain; millimeter wave receiver; preamplifier stability; sideband separating mixer receiver; time domain; Bandwidth; Cryogenics; Fluctuations; Frequency domain analysis; HEMTs; Indium phosphide; MODFETs; Preamplifiers; Stability; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572480

Filename

1572480