Terahertz emission from (100)p-InAs

Author

Smith, M.L. ; Mendis, R. ; Vickers, R.E.M. ; Lewi, R.A.

Author_Institution

Inst. for Supercond. & Electron. Mater., Wollongong Univ., NSW, Australia

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

253

Abstract

Terahertz emission from (100) p-type InAs illuminated by ultrafast near-infrared pulses is investigated. A two-fold rotational symmetry was observed when rotated about the surface normal. A quadratic relationship was found for the emission dependence on optical pump power. These suggest the presence of photocarrier transport and optical rectification mechanisms. The InAs emission was found to exceed that of a blackbody radiator for frequencies below 1 THz for nominal input power levels. The generated power was found to be roughly two orders of magnitude greater than a 1mm ZnTe emitter.

Keywords

III-V semiconductors; blackbody radiation; indium compounds; optical pumping; submillimetre wave generation; surface emitting lasers; (100)p-InAs; InAs; blackbody radiator; emission dependence; optical pump power; optical rectification mechanisms; photo-carrier transport; rotational symmetry; terahertz emission; ultrafast near-infrared pulses; Bandwidth; Electrodes; Geometry; Nonlinear optics; Optical pumping; Personal communication networks; Reflection; Stimulated emission; Superconducting materials; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572504

Filename

1572504