DocumentCode :
447860
Title :
1.55 μm GalnNAsSb lasers on GaAs
Author :
Bank, S.R. ; Wistey, M.A. ; Goddard, L.L. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Volume :
1
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
89
Abstract :
We present a 1.55 μm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm2, lasing at 1.553 μm.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; semiconductor quantum wells; 1.55 micron; 293 to 298 K; GaAs; GaInNAsSb; GaInNAsSb laser growth; GaNAs; active layer; molecular beam epitaxy; room temperature threshold current density; single quantum well; strain-compensating GaNAs barriers; Degradation; Gallium arsenide; Lasers and electrooptics; Optical pulses; Photoluminescence; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201686
Filename :
1572752
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447860
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