• DocumentCode
    44788
  • Title

    Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation

  • Author

    Dasgupta, Avirup ; Khandelwal, Sourabh ; Chauhan, Yogesh Singh

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
  • Volume
    25
  • Issue
    6
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    376
  • Lastpage
    378
  • Abstract
    In this letter, an analytical surface potential based compact model for thermal noise in high electron mobility transistors (HEMTs) is presented. The model is based on the recently proposed surface potential formulation for charges and current. The model is tunable and applicable to any HEMT device.
  • Keywords
    HEMT circuits; high electron mobility transistors; semiconductor device models; semiconductor device noise; thermal noise; HEMT circuit simulation; HEMT device; high-electron mobility transistors; surface potential-based compact modelling; thermal noise; Analytical models; Gallium nitride; HEMTs; Integrated circuit modeling; Mathematical model; Noise; Thermal noise; HEMT; noise model; thermal noise;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2015.2422472
  • Filename
    7095620
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=44788