Author :
Green, R.P. ; Wilson, L.R. ; Revin, D.G. ; Zibik, E.A. ; Cockburn, J.W. ; Krysa, A.B. ; Tey, C.M. ; Roberts, J.S. ; Cullis, A.G. ; Pflügl, C. ; Schrenk, W. ; Strasser, G. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H.
Abstract :
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performance MBE grown structures
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; DFB lasers; InGaAs-AlInAs; MBE structures; MOVPE; epitaxial quality; quantum cascade lasers; Density measurement; Epitaxial growth; Epitaxial layers; Gas lasers; Laser modes; Quantum cascade lasers; Temperature; Threshold current; Waveguide lasers; Wavelength measurement;
