• DocumentCode
    447923
  • Title

    Site selective spectroscopy of Eu-doped GaN

  • Author

    Dierolf, Volkmar ; Fleischman, Zackery ; Sandmann, Christian ; Munasinghe, Chanaka ; Steckl, A.

  • Author_Institution
    Dept. of Phys., Lehigh Univ., Bethlehem, PA
  • Volume
    1
  • fYear
    2005
  • fDate
    27-27 May 2005
  • Firstpage
    306
  • Lastpage
    308
  • Abstract
    Site-selective combined excitation emission spectroscopy studies have been performed on Eu-doped GaN and numerous sites have been identified. Relative numbers and broadening of these peaks has been investigated for different growth conditions
  • Keywords
    III-V semiconductors; europium; gallium compounds; photoluminescence; wide band gap semiconductors; GaN:Eu; growth conditions; site-selective combined excitation emission spectroscopy; Gallium nitride; Laser excitation; Molecular beam epitaxial growth; Optical materials; Optical pumping; Particle beam optics; Semiconductor lasers; Semiconductor optical amplifiers; Spectroscopy; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201760
  • Filename
    1572826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447923