DocumentCode
448005
Title
Very low threshold, carrier- and index-confined semiconductor lasers by one single selective-area-growth
Author
Cai, Jianxin ; Gu, Yonglin ; Ji, Xiaoming ; Yan, Jingzhou ; Ru, Guoyun ; Cheng, Liwel ; Choa, Fow-Sen ; Fan, Jenyu
Author_Institution
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
562
Abstract
We demonstrated very low threshold carrier- and index-confined semiconductor lasers made of a single selective-area-growth without regrowths. The threshold current is as low as 2.7 mA with excellent uniformity and reproducibility.
Keywords
MOCVD; optical fabrication; semiconductor lasers; 2.7 mA; carrier-confined semiconductor lasers; index-confined semiconductor lasers; single selective-area-growth; threshold current; Distributed feedback devices; Etching; Indium gallium arsenide; Indium phosphide; Laser theory; MOCVD; Quantum well devices; Semiconductor lasers; Temperature; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201847
Filename
1572913
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