High-speed 850 nm AlGaAs/GaAs vertical cavity surface emitting laser with low parasitic capacitance fabricated using BCB planarization technique

Author

Tanigawa, Tatsuya ; Onishi, Toshikazu ; Nagai, Shuichi ; Ueda, Tetsuzo

Author_Institution

Semicond. Device Res. Center, Matsushita Electr. Ind. Co. Ltd., Japan

Volume

2

fYear

2005

fDate

22-27 May 2005

Firstpage

1381

Abstract

12.5 Gbps operation of low-k benzocyclobutene (BCB)-planarized 850 nm AIGaAs-based VCSEL is presented. The chip capacitance is 70% reduced from that of conventional SiN-passivated one. The VCSEL exhibits very high relaxation oscillation frequency of 12 GHz with stable operation at 70°C over 750 hours.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; laser cavity resonators; laser stability; optical fabrication; organic compounds; planarisation; semiconductor lasers; silicon compounds; surface emitting lasers; 12 GHz; 12.5 Gbits/s; 70 degC; 850 nm; AlGaAs-GaAs; BCB planarization technique; SiN; VCSEL; benzocyclobutene; chip capacitance; conventional SiN; parasitic capacitance; relaxation oscillation frequency; vertical cavity surface emitting laser; Bandwidth; Distributed feedback devices; Frequency; Gallium arsenide; Laser feedback; Parasitic capacitance; Planarization; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2005. (CLEO). Conference on

Print_ISBN

1-55752-795-4

Type

conf

DOI

10.1109/CLEO.2005.202132

Filename

1573198