DocumentCode
448628
Title
Simulation and experiment for high voltage high power IGCT device
Author
Li, Haishan ; Li, Yaohua
Author_Institution
Inst. of Electr. Eng., Chinese Acad. of Sci., Beijing
Volume
2
fYear
2005
fDate
29-29 Sept. 2005
Firstpage
1130
Abstract
To imitate the static and dynamic behavior of the integrated gate-commutated thyristor (IGCT), this paper presents a new circuit level model for this high voltage high power device, which is implemented in PSIM simulation tool. The effectiveness of this model is verified by comparing simulation with experimental results of a 4.5 kV/4 kA IGCT device
Keywords
semiconductor device models; thyristors; 4 kA; 4.5 kV; PSIM simulation tool; circuit level model; dynamic behavior; high voltage high power device; integrated gate-commutated thyristor; static behavior; Anodes; Arithmetic; Circuit simulation; Insulated gate bipolar transistors; Low voltage; Power electronics; Propagation delay; Snubbers; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Machines and Systems, 2005. ICEMS 2005. Proceedings of the Eighth International Conference on
Conference_Location
Nanjing
Print_ISBN
7-5062-7407-8
Type
conf
DOI
10.1109/ICEMS.2005.202722
Filename
1574955
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