Title :
Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 μm MQW structures with different barrier compositions
Author :
Akram, M. Nadeem ; Schatz, Richard ; Marcinkevicius, S. ; Kjebon, Olle ; Berggren, J.
Author_Institution :
IMIT Dept., R. Inst. of Technol., Stockholm, Sweden
Abstract :
Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.
Keywords :
III-V semiconductors; chirp modulation; gadolinium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor device measurement; 1.55 mum; FP lasers; InGaAsP-InGaAlAs; InGaAsP/InGaAlAs MQW test structures; barrier compositions; carrier transport; differential modal gain; modal gain;
Conference_Titel :
Optical Communication, 2005. ECOC 2005. 31st European Conference on
Conference_Location :
IET
Print_ISBN :
0-86341-543-1
