• DocumentCode
    449239
  • Title

    Passively modelocked 20 and 40 GHz bulk InGaAsP lasers

  • Author

    Barbarin, Y. ; Bente, E.A.J.M. ; Heck, M.J.R. ; Oei, Y.S. ; Notzel, R. ; Smit, M.K.

  • Author_Institution
    Eindhoven Univ. of Technol., Netherlands
  • Volume
    3
  • fYear
    2005
  • fDate
    25-29 Sept. 2005
  • Firstpage
    673
  • Abstract
    Passively modelocked linear lasers have been fabricated using bulk InGaAsP/InP material. Modelocking in 20 GHz self colliding pulse modelocked lasers and 40 GHz colliding pulse lasers has been demonstrated and the devices have been characterised. Pulse lengths down to 1.6 ps have been observed.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser mode locking; optical pulse generation; semiconductor lasers; 1.6 ps; 20 GHz; 40 GHz; InGaAsP lasers; InGaAsP-InP; colliding pulse lasers; passive modelocking; self colliding pulse modelocked lasers;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 2005. ECOC 2005. 31st European Conference on
  • Conference_Location
    IET
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-543-1
  • Type

    conf

  • Filename
    1576453
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=449239