• DocumentCode
    450200
  • Title

    An optically pumped silicon evanescent laser

  • Author

    Fang, A.W. ; Park, Hyundai ; Kodama, Satoshi ; Bowers, John E.

  • Author_Institution
    ECE Dept., California State Univ., Santa Barbara, CA, USA
  • Volume
    6
  • fYear
    2005
  • fDate
    25-29 Sept. 2005
  • Firstpage
    57
  • Abstract
    A laser utilizing wafer scale heterogeneous integration of silicon waveguides with offset AlGaInAs quantum wells is demonstrated. This laser has a threshold of 30 mW and a maximum power of 1.4 mW and has the ability to integrate photonic devices with Si VLSI CMOS technology.
  • Keywords
    III-V semiconductors; VLSI; aluminium compounds; elemental semiconductors; gallium arsenide; gallium compounds; integrated optics; optical pumping; quantum well lasers; silicon; 1.4 mW; 30 mW; AlGaInAs; AlGaInAs quantum wells; Si; Si VLSI CMOS; optically pumped silicon evanescent laser; wafer scale heterogeneous integration;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 2005. ECOC 2005. 31st European Conference on
  • Conference_Location
    IET
  • ISSN
    0537-9989
  • Print_ISBN
    0-86341-543-1
  • Type

    conf

  • Filename
    1584176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=450200