DocumentCode
45082
Title
All-Inorganic Light-Emitting Diodes Based on Solution-Processed Nontoxic and Earth-Abundant Nanocrystals
Author
Bhaumik, Sudipta ; Pal, A.J.
Author_Institution
Dept. of Solid State Phys., Indian Assoc. for the Cultivation of Sci., Kolkata, India
Volume
49
Issue
3
fYear
2013
fDate
Mar-13
Firstpage
325
Lastpage
330
Abstract
We fabricate and characterize light-emitting diodes (LEDs) based on thin-films of NiO, Mn-doped ZnS, and n-ZnO nanoparticles acting as hole-transporting, emitting, and electron-transporting layers, respectively. We vary the thickness of the individual layers and record current-voltage and luminance-current characteristics. By examining the fitting of the current-voltage characteristics of these all-inorganic LEDs, we find that the hole- and electron-transporting layers lower barrier heights for hole- and electron-injection from the respective electrodes that correspondingly improve electro-luminescence (EL) output. The photoluminescence emission of Mn-doped ZnS nanoparticles and EL emission of the LEDs resembled implying that excitons formed in the doped nanostructures followed by a radiative transition between d-states of Mn-ions.
Keywords
electroluminescence; light emitting diodes; nanophotonics; nanostructured materials; all-inorganic light-emitting diodes; current-voltage characteristics; electro-luminescence output; electron-transporting layers; individual layers; luminance-current characteristics; solution-processed nontoxic and earth-abundant nanocrystals; thin-films; Electrodes; Films; Indium tin oxide; Light emitting diodes; Nanocrystals; Zinc oxide; $d$ -states of Mn-ions; All-inorganic light-emitting diodes; Mn-doped ZnS nanoparticles; NiO; ZnO nanoparticles;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2013.2245404
Filename
6451100
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