2.1 mΩ-cm2, 1.6 kV 4H-Silicon Carbide VJFET for Power Applications

Author

Veliadis, Victor ; Chen, Li-Shu ; Stewart, Eric ; McCoy, Megan ; McNutt, Ty ; Van Campen, Steve ; Clarke, Chris ; DeSalvo, Gregory

fYear

2005

fDate

Dec. 7-9, 2005

Firstpage

166

Lastpage

167

Keywords

Dielectrics; Electrons; Epitaxial layers; Forward contracts; Implants; Packaging; Silicides; Silicon carbide; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2005 International

Print_ISBN

1-4244-0083-X

Type

DOI

10.1109/ISDRS.2005.1596034

Filename

1596034

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