A GEANT-based model for single event upsets in SRAM FPGAs for use in on-detector electronics

Author

Skutnik, Steven E. ; Lajoie, John G.

Author_Institution

Dept. of Phys. & Astron., Iowa State Univ., Ames, IA

Volume

2

fYear

2005

fDate

23-29 Oct. 2005

Firstpage

1117

Lastpage

1121

Abstract

A model is proposed to calculate expected single event upset rates in Xilinx\´s line of radiation-hardened field programmable gate array offerings for the radiation environment at the PHENIX experiment on the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The results of this model are compared to an experiment carried out at PHENIX, where actual upset data was obtained. Specific attention is given to unique features of the model, including major sources of "secondary" radiation flux

Keywords

field programmable gate arrays; nuclear electronics; radiation hardening (electronics); GEANT-based model; PHENIX experiment; Relativistic Heavy Ion Collider; SRAM FPGA; Xilinx radiation-hardened field programmable gate array; on-detector electronics; secondary radiation flux; single event upset rates; Astronomy; Field programmable gate arrays; Logic devices; Neutrons; Physics; Protons; Random access memory; Single event transient; Single event upset; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2005 IEEE

Conference_Location

Fajardo

ISSN

1095-7863

Print_ISBN

0-7803-9221-3

Type

conf

DOI

10.1109/NSSMIC.2005.1596447

Filename

1596447