An improved fabrication technology for silicon detectors with integrated JFET/MOSFET electronics

We report on an improved fabrication technology allowing n-JFET/n-MOSFET charge sensitive amplifiers to be monolithically integrated with radiation detectors on high-resistivity silicon substrates. The new process features a high-energy (1 MeV) boron implantation which ensures an effective JFET isolation from the substrate and a strong modulating effect on the current. Additional process modifications have been included to implement poly-Si gate, self-aligned n-MOSFETs, which can ease the design of fully integrated read-out channels. Selected results from the experimental characterization of transistors and charge sensitive amplifiers are presented, showing a sizable enhancement in the noise performance.