• DocumentCode
    452529
  • Title

    Highly Sensitive and Highly Reliable APD for 10 Gbit/s Optical Communication Systems

  • Author

    Tanaka, S. ; Fujisaki, S. ; Matsuoka, Y. ; Tsuchiya ; Tsuji, S. ; Ito, K. ; Toyonaka, T. ; Matsuda, H. ; Miura, And A.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji-shi
  • Volume
    4
  • fYear
    2002
  • fDate
    8-12 Sept. 2002
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An InAlAs-avalanche photodiodes (APDs) with gain-bandwidth (GB) product of 120 GHz suitable for 10 Gbit/s optical communication systems has been developed. With a SiGe-HBT preamplifier, the minimum sensitivity of -29.8 dBm was demonstrated
  • Keywords
    Ge-Si alloys; III-V semiconductors; aluminium compounds; avalanche photodiodes; heterojunction bipolar transistors; indium compounds; optical receivers; 10 Gbit/s; 120 GHz; HBT preamplifier; InAlAs; SiGe; avalanche photodiodes; gain-bandwidth product; high-reliable APD; high-sensitive APD; optical communication systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communication, 2002. ECOC 2002. 28th European Conference on
  • Conference_Location
    Copenhagen
  • Print_ISBN
    87-90974-63-8
  • Type

    conf

  • Filename
    1601344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=452529