DocumentCode
452532
Title
Small-chirp 40Gbps EA modulator with novel tensile-strained asymmetric quantum well absorption layer
Author
Miyazaki, Yasunori ; Tada, Hitoshi ; Tokizaki, S. ; Takagi, Kazuhisa ; Hanamaki, Yoshihiko ; Aoyagi, Toshitaka ; Mitsui, Yasuo
Author_Institution
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Kanagawa
Volume
4
fYear
2002
fDate
8-12 Sept. 2002
Firstpage
1
Lastpage
2
Abstract
We demonstrate small chirp 40 Gbps electroabsorption modulator (EAM) with tensile-strained asymmetric quantum well absorption layer. Clear eye opening and small chirp (a<1) were achieved under high input power (+15 dBm) condition for the first time
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor quantum wells; tensile strength; 40 Gbit/s; InGaAsP-InGaAsP; electroabsorption modulator; small-chirp EA modulator; tensile-strained asymmetric quantum well absorption layer;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 2002. ECOC 2002. 28th European Conference on
Conference_Location
Copenhagen
Print_ISBN
87-90974-63-8
Type
conf
Filename
1601347
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