• DocumentCode
    45289
  • Title

    Constriction Resistance and Current Crowding in Vertical Thin Film Contact

  • Author

    Peng Zhang ; Lau, Y.Y.

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    1
  • Issue
    3
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    83
  • Lastpage
    90
  • Abstract
    The constriction resistance and the current flow pattern are calculated analytically in a vertical thin film contact in which the thin film base is an equipotential surface. Both Cartesian and cylindrical thin film contacts are studied. The resistivities and the geometric dimensions in the individual contact members may assume arbitrary values. General scaling laws are constructed for the constriction resistance for arbitrary resistivity ratios and geometric aspect ratios. The analytic solutions are validated using a simulation code. Current crowding at the edges is displayed. In the limit of small film thickness, we show that current crowding in the vertical contact is far less serious than the current crowding in the horizontal contact. The data show that the normalized constriction resistance depends predominantly on the geometry of the thin film, but is relatively insensitive to the height and to the resistivity of the member with which the thin film is in contact.
  • Keywords
    contact resistance; thin films; Cartesian thin film contact; arbitrary resistivity ratio; constriction resistance; contact resistance; current crowding; current flow pattern; cylindrical thin film contact; geometric aspect ratio; geometric dimension; horizontal contact; scaling law; simulation code; thin film base; vertical contact; vertical thin film contact; Contact resistance; current crowding; spreading resistance; thin film;
  • fLanguage
    English
  • Journal_Title
    Electron Devices Society, IEEE Journal of the
  • Publisher
    ieee
  • ISSN
    2168-6734
  • Type

    jour

  • DOI
    10.1109/JEDS.2013.2261435
  • Filename
    6512555