DocumentCode
453037
Title
An improved method of microwave power MESFET modeling
Author
Yifan, Gao ; Cong, Gu
Author_Institution
Chang´´an Univ., Xi´´an, China
Volume
1
fYear
2005
fDate
4-7 Dec. 2005
Abstract
An improved method of extracting the modeling parameters, small-signal equivalent circuit parameters, is proposed in this paper, including the approaches of determining all elements´ sensitivities to the sum of error functions, optimization sequence and direction of objective functions with eigenvalues and eigenvectors of Hessian matrix, and approach of damping algorithm. The agreement is good between the calculated values and the measurement ones of MESFET.
Keywords
Hessian matrices; eigenvalues and eigenfunctions; equivalent circuits; microwave field effect transistors; power MESFET; semiconductor device models; Hessian matrix; damping algorithm; equivalent circuit parameters; error functions; microwave power MESFET modeling; modeling parameters extraction; optimization sequence; Damping; Databases; Eigenvalues and eigenfunctions; Equivalent circuits; Frequency; Gallium arsenide; MESFETs; Microwave theory and techniques; Optimization methods; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN
0-7803-9433-X
Type
conf
DOI
10.1109/APMC.2005.1606323
Filename
1606323
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