Four terminal GaAs-InGaP BIFET DC model for wireless application

Recently BIFET, a four-terminal MESFET with a p-layer as backgate, emerged as a new technology for wireless, application, that allows HBT and FET to integrate onto same wafer and therefore expands functionalities of circuits and reduce the cost. A novel four-terminal DC model was developed for the first time for accurate DC applications. In this model, the drain current, gate current as well as leakage current are 3D functions that model accurately all terminal currents as well as temperature dependence. The model also predicts very well IV curves for the case when backgate is connected to source or to gate and therefore the device reduces to three-terminal. The model has been used in SKYWORKS for complex PA module design that found applications for wireless communications.