Title :
A fully integrated 2.4GHz 0.25μm CMOS low noise amplifier
Author :
Wen-qi, Wang ; Liang, Xu ; Xue-feng, Tang ; Fu-chun, Zhan
Author_Institution :
Sch. of Commun. & Inf. Eng., Shanghai Univ., China
Abstract :
A fully integrated 2.4GHz 0.25μm low noise amplifier available to Bluetooth has been reported in TSMC 0.25 μm CMOS process. Design procedure and simulation results are presented and measurement results are achieved. With 2.5V supply voltage, the LNA achieves gain and noise figure of 16.95dB and 2.96dB, respectively. The power dissipation is 17.5mW. The values measured agreement with those of the simulation. The die area is 0.81 mm2 (including pads).
Keywords :
Bluetooth; CMOS integrated circuits; UHF amplifiers; low noise amplifiers; 0.25 micron; 16.95 dB; 17.5 mW; 2.4 GHz; 2.5 V; 2.96 dB; Bluetooth; CMOS process; LNA; die area; low noise amplifier; power dissipation; Bluetooth; CMOS process; Circuit noise; Energy consumption; Impedance matching; Inductance; Low-noise amplifiers; Noise figure; Radiofrequency integrated circuits; Voltage; CMOS; LNA; fullyintegrated;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606407
