High linearity SPDT switch for dual band wireless LAN applications

Author

Lee, Kang-Ho ; Jin, Zhejun ; Koo, Kyung-Heon

Author_Institution

Dept. of Electron. Eng., Incheon Univ., South Korea

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

This paper presents a high linear and power-handling single-pole double-throw (SPDT) switch for WLAN 802.11 a/b/g applications. The switch circuit has asymmetric and stacked topology to have high power-handling and linearity for the Tx path. This SPDT switch has been implemented with 0.25 μm GaAs pHEMT process by ETRI. The designed SPDT switch has the measured insertion loss of better than 1dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with P_1dB of about 23dBm with control voltage of -3/0 V. The fabricated SPDT switch chip size is 1.8 mm × 1.8 mm.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; microwave switches; wireless LAN; 0.25 micron; 1.8 mm; GaAs; MMIC; Rx path; Tx path; WLAN 802.11 a/b/g applications; asymmetric topology; dual band wireless LAN applications; high linearity SPDT switch; insertion loss; pHEMT process; single-pole double-throw; stacked topology; switch circuit; Circuit topology; Dual band; Gallium arsenide; Linearity; Loss measurement; PHEMTs; Power measurement; Switches; Switching circuits; Wireless LAN; MMIC; SPDT; pHEMT; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606461

Filename

1606461