• DocumentCode
    453134
  • Title

    The research based on the design of a 1.3GHz cascode LNA

  • Author

    Hongbo, Ma ; Quanyuan, Feng ; Kunlin, Gong

  • Author_Institution
    Inst. of Microelectron., Southwest Jiaotong Univ., Chengdu, China
  • Volume
    2
  • fYear
    2005
  • fDate
    4-7 Dec. 2005
  • Abstract
    A 1.3GHz cascode low noise amplifier based on 0.25μm CMOS technology has been successfully designed in this paper. From the aspect of noise optimization, gain and impedance match, the design methodology for LNA is analyzed in detail, the influence of capacitance Cgd, C_match_in, and W2 on LNA is also discussed, whose noise factor and S-parameter is simulated and tested by the ADS software. The result has argued that the good NF of 1.42dB, moderate gain of 13.687dB, acceptable S11 of -14.769dB, S22 of -14.530dB, S12 of -52.955dB are achieved under the frequency of 1.3GHz.
  • Keywords
    CMOS integrated circuits; S-parameters; UHF amplifiers; capacitance; low noise amplifiers; 0.25 micron; 1.3 GHz; 1.42 dB; 13.687 dB; CMOS technology; S-parameter; cascode LNA; gain; impedance match; low noise amplifier; noise factor; noise optimization; Analytical models; CMOS technology; Capacitance; Design methodology; Design optimization; Impedance; Low-noise amplifiers; Noise measurement; Scattering parameters; Software testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
  • Print_ISBN
    0-7803-9433-X
  • Type

    conf

  • DOI
    10.1109/APMC.2005.1606469
  • Filename
    1606469