Effect of gate oxide breakdown on RF noise of deep submicron NMOSFETs

Author

Zeng, Rong ; Wang, Hong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

Degradation of high frequency noise characteristics in 0.18 μm NMOSFET induced by gate oxide breakdown has been characterized in the frequency range of 2 to 14 GHz. A serous degradation of microwave noise performance has been observed. The degradation mechanisms are analyzed by extraction of the channel and gate noise using a noise equivalent circuit model. It has been found that, gate shot noise, which is commonly ignored in the as-processed NMOSFET, plays a dominant role in determining the microwave noise performance in the post-oxide breakdown NMOSFET.

Keywords

MOSFET; equivalent circuits; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; 0.18 micron; 2 to 14 GHz; RF noise; channel noise; deep submicron NMOSFET; dielectric breakdown; gate oxide breakdown; gate shot noise; microwave noise degradation; noise equivalent circuit model; Circuit noise; Degradation; Electric breakdown; Equivalent circuits; Frequency measurement; Hot carriers; MOSFETs; Microwave devices; Radio frequency; Stress; Dielectric breakdown; Microwave Noise; RF MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606471

Filename

1606471