Circuit techniques to improve the linearity of an up-conversion double balanced mixer with an active balun using InGaP/GaAs HBT technology

Author

Lee, Rok-Hee ; Lee, Jae-Young ; Lee, Sang-Hun ; Shrestha, Bhanu ; Kim, Sun-Jin ; Kennedy, Gary P. ; Park, Chan Hyeong ; Kim, Nam-Young ; Cheon, Sang-Hoon

Author_Institution

RFIC Center, Kwangwoon Univ., South Korea

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

This paper describes two circuit techniques to improve the linearity of an up-conversion double balanced mixer (DBM). These techniques are optimized for dual-band operation in PCS and IMT-2000 applications. Also, the integrated active balun is used at the RF port to produce a single-ended RF output signal. To improve the linearity of the mixer, the emitter degeneration resistors and the current injection resistors are used. The DBM with both resistors shows an improved IIP3 from -7.0 dBm to 6.5 dBm and P_1dB increases from -15 dBm to -4 dBm. Furthermore, a DBM which uses only the emitter degeneration resistor has been fabricated using an InGaP/GaAs HBT process.

Keywords

III-V semiconductors; baluns; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; mixers (circuits); resistors; DBM; InGaP-GaAs; InGaP/GaAs HBT technology; RF output signal; RF port; active balun; circuit techniques; current injection resistors; double balanced mixer; emitter degeneration resistors; Dual band; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Integrated circuit technology; Linearity; Personal communication networks; RF signals; Radio frequency; Resistors; active balun; double balanced mixer; high linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606499

Filename

1606499