A 2 GHz high isolation DPDT switch MMIC

Author

Yang, Ziqiang ; Yang, Tao ; You, Yu ; Xu, Ruimin

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

2

fYear

2005

fDate

4-7 Dec. 2005

Abstract

A double-pole double-throw (DPDT) switch monolithic microwave integrated circuit (MMIC) has been designed to operate from dc to 2 GHz using a commercial 0.18-μm GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. The DPDT switch employs four shunt FET blocks to achieve high isolation. The ON gate bias is set to 0.6 V to reduce the insertion loss. The simulated results of the DPDT switch chip show an insertion loss of less than 0.61 dB and isolation of more than 50 dB up to 2 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; integrated circuit design; semiconductor switches; 0 to 2 GHz; 0.18 micron; 0.6 V; FET blocks; GaAs; double-pole double-throw switch; gate bias; insertion loss; monolithic microwave integrated circuit; pseudomorphic high electron-mobility transistor; Gallium arsenide; Insertion loss; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs; Switches; Switching circuits; DPDT; MMIC; pHEMT; switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606503

Filename

1606503