Title :
The small-signal performance and model of an LDMOSFET on high-resistivity SOI
Author :
Chen, Zhanfei ; Sun, Lingling ; Li, Wenjun ; Cheng, Xinhong ; Song, Zhaorui
Author_Institution :
Microelectron. CAD Center, Hang Zhou Dianzi Univ., Hangzhou, China
Abstract :
We have fabricated an LDMOSFET on high-resistivity silicon-on-insulator (SOI) wafer. The electrical characteristics of the transistor (DC/RF) which is executed at the wafer level are presented. For 1μm gate length, this transistor has an on-state breakdown voltage of greater than 10 V and an off-state breakdown voltage of greater than 20 V, and ft is greater than 4GHz. The model of this device in DC characteristics is presented using EPFL-EKV MOSFET model, and the main intrinsic parameters are extracted.
Keywords :
MOSFET; parameter estimation; semiconductor device breakdown; semiconductor device manufacture; semiconductor device models; silicon-on-insulator; 1 micron; DC characteristics; EPFL-EKV MOSFET model; LDMOSFET model; SOI wafer; electrical characteristics; gate length; high-resistivity SOI; off-state breakdown voltage; on-state breakdown voltage; silicon-on-insulator wafer; Electric variables; Fabrication; MOSFET circuits; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Silicon on insulator technology; Threshold voltage; Wireless LAN;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606583
