• DocumentCode
    453208
  • Title

    A novel LDMOSFET on patterned-SOI for RF wireless applications

  • Author

    Li, Wenjun ; Chen, Zhanfei ; Liu, Jun ; Sun, Lingling ; Cheng, Xinhong ; Song, Zhaorui ; Yu, Yuehui

  • Author_Institution
    Microelectron. CAD Center, Hangzhou Dianzi Univ., China
  • Volume
    3
  • fYear
    2005
  • fDate
    4-7 Dec. 2005
  • Abstract
    A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifiers applications. This novel device has good DC and RF characteristics, such as no kink effect on output performance, off-state breakdown up to 13V, and fT=8GHz at DC bias of VG=4V and VD=3.6V, which are better than that of body contact SOI and bulk LDMOSFETs in same wafer with same process conditions.
  • Keywords
    MOSFET; radiofrequency amplifiers; silicon-on-insulator; 3.6 V; 4 V; 8 GHz; RF power amplifiers; RF wireless applications; body contact SOI; bulk LDMOSFET; lateral double diffused MOSFET; p-type channel; patterned-SOI LDMOSFET; silicon window; silicon-on-insulator; Annealing; Circuits; Etching; Fingers; Leakage current; Parasitic capacitance; Power amplifiers; Radio frequency; Silicon on insulator technology; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
  • Print_ISBN
    0-7803-9433-X
  • Type

    conf

  • DOI
    10.1109/APMC.2005.1606586
  • Filename
    1606586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=453208