DocumentCode
45332
Title
Wideband harmonic-tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X-band
Author
Seungwon Park ; Sanggeun Jeon
Author_Institution
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume
51
Issue
9
fYear
2015
fDate
4 30 2015
Firstpage
703
Lastpage
705
Abstract
A wideband power amplifier (PA) with high output power and efficiency over the entire X-band is implemented in a 0.11 μm CMOS technology. To achieve high efficiency in the wideband, a new harmonic-tuned technique is proposed for the output matching network of the PA, while no radio frequency (RF) choke is used for DC bias. Measurement results show that the output power and power-added efficiency (PAE) are no less than 19.5 dBm and 22.6%, respectively, over the entire X-band. The peak PAE is 28.9% with an output power of 20.3 dBm at 9 GHz.
Keywords
CMOS analogue integrated circuits; MMIC power amplifiers; circuit tuning; wideband amplifiers; DC bias; PA; PAE; RF choke; efficiency 22.6 percent; efficiency 28.9 percent; frequency 9 GHz; output matching network; power-added efficiency; radiofrequency choke; size 0.11 mum; wideband harmonic-tuned CMOS power amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.4541
Filename
7095683
Link To Document