Study on slit pad structure to maintain MMIC characteristics both in on-wafer and on-package conditions in millimeter-wave applications

Author

Chaki, Shin ; Ishida, Takao ; Notani, Yoshihiro ; Mizukoshi, Takeo ; Sasaki, Yoshinobu ; Komaru, Makio

Author_Institution

High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan

Volume

1

fYear

2005

fDate

4-6 Oct. 2005

Abstract

Slit pad structure has been suggested as a novel probing/bonding pad in order to achieve the same characteristics for MMIC between on-wafer and on-package cases in millimeter-wave applications. The dimensions for the new structure has been estimated with measurement for transmission lines and calculations using a commercial EM simulator (Sonnet EM), while a bonding strength for wire on the slit pad has been confirmed experimentally using wire pulling and pushing tests. As a result, it has become clear that a slit width of 5 μm and a gap, which is a distance between a GND pad and a land pad, of 40 μm are the most adequate dimensions to maintain MMIC characteristics both in on-wafer and on-package in broad frequency range. In addition, it has been demonstrated that the slit pad having the slit width of 5 μm has maintained the same strength for wire bonding compared with wire bonding on a pad without the slit.

Keywords

MMIC; integrated circuit interconnections; integrated circuit packaging; transmission lines; wafer bonding; 40 micron; 5 micron; EM simulator; GND pad; MMIC characteristics; Sonnet EM; bonding pad; bonding strength; land pad; millimeter-wave applications; on-wafer package; probing pad; slit pad structure; transmission lines; wire bonding; wire pulling test; wire pushing test; Atherosclerosis; Bonding; Costs; Frequency; MMICs; Millimeter wave measurements; Millimeter wave radar; Testing; Transmission line measurements; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1608816

Filename

1608816