Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility

Author

Marin, Enrique G. ; Ruiz, Francisco G. ; Godoy, Andres ; Tienda-Luna, Isabel M. ; Martinez-Blanque, Celso ; Gamiz, Francisco

Author_Institution

Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain

Volume

62

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

224

Lastpage

227

Abstract

In this brief, the influence of the back-gate biasing, V_bg, on the electron mobility of Si trigates on ultrathin buried oxide is studied, using state of the art scattering models for 2-D confined devices. The variation of the back-gate influence with the device size is analyzed and explained addressing to the charge redistribution in the channel. The lower confinement of larger devices results in strong changes in the electron mobility as V_bg is modified, contrary to what is observed in smaller devices. The charge redistribution due to V_bg also affects the relative influence of the interface walls, which is analyzed in depth. The impact on the mobility of the main scattering mechanisms as a function of V_bg is also discussed.

Keywords

MOSFET; electron mobility; elemental semiconductors; silicon; 2D confined devices; Si; back-gate biasing; charge redistribution; device size; interface walls; main scattering mechanisms; relative influence; trigate MOSFET electron mobility; trigates; ultrathin buried oxide; Electron mobility; Logic gates; MOSFET; Nickel; Scattering; Silicon; Back bias; electron mobility; threshold voltage control; trigate SOI; trigate SOI.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2367574

Filename

6960083