Behavior of a common source traveling wave amplifier versus temperature in SOI technology

Author

Moussa, M. Si ; Pavageau, C. ; Simon, P. ; Danneville, F. ; Russat, J. ; Fel, N. ; Raskin, J.P. ; Vanhoenacker-Janvier, D.

Author_Institution

Microwave Lab., Univ. catholique de Louvain, Louvain-la-Neuve, Belgium

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

In this paper, the design and the results of a CMOS Silicon-On-Insulator (SOI) traveling wave amplifier (TWA) versus temperature are presented. The four stage TWA is designed with a single common source n-MOSFET in each stage using a 130 nm SOI CMOS technology requiring a chip area of 0.75 mm². A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4 V supply voltage with a measured power consumption of 66 mW. The designed circuit has been characterized over a temperature range from 25 to 300°C. The performance degradation on the gain of the TWA, the SOI transistors as well as the microstrip lines used for the matching network are analyzed.

Keywords

CMOS integrated circuits; integrated circuit modelling; silicon-on-insulator; travelling wave amplifiers; 1.4 V; 130 nm; 25 to 300 C; 30 GHz; 4.5 dB; 66 mW; SOI CMOS technology; matching network; microstrip lines; single common source n-MOSFET; temperature effects; traveling wave amplifier; Bandwidth; CMOS technology; Energy consumption; Gain measurement; MOSFET circuits; Power measurement; Semiconductor device measurement; Silicon on insulator technology; Temperature; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610116

Filename

1610116