Investigation of longitudinal drift waves in semiconducting multilayered structure

Author

Shramkova, O.V. ; Bulgakov, A.A.

Author_Institution

Inst. of Radiophys. & Electron., Ukraine Nat. Acad. of Sci., Kharkov, Ukraine

Volume

2

fYear

2005

fDate

4-6 Oct. 2005

Abstract

The effect of carrier drift on the dispersion properties and instability of longitudinal drift waves in infinite layered periodic structures is considered. We investigate the periodic structure composed of alternating layers of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. In this case we can consider the structure as two-component plasma. It was shown that the plasma properties of the structure depend on the thicknesses of layers. The instability increments for the drift waves are determined.

Keywords

dispersion (wave); drift instability; electromagnetic waves; multilayers; plasma drift waves; semiconductor materials; semiconductors; carrier drift effect; dispersion properties; electromagnetic wave; electron semiconductors; hole semiconductors; infinite layered periodic structures; instability; longitudinal drift waves; semiconducting multilayered structure; two-component plasma; Charge carrier processes; Electromagnetic scattering; Frequency; Hydrodynamics; Maxwell equations; Periodic structures; Plasma properties; Plasma waves; Semiconductivity; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610122

Filename

1610122