Title :
Large-signal PIN diode model for ultra-fast photodetectors
Author :
Fritsche, Carsten ; Krozer, Viktor
Author_Institution :
Dept. of Electromagn. Syst., Denmark Tech. Univ., Lyngby, Denmark
Abstract :
A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.
Keywords :
avalanche photodiodes; p-i-n photodiodes; photodetectors; semiconductor device models; semiconductor superlattices; tunnelling; PIN photodetector; THz signal generation; avalanche breakdown; avalanche photodiodes; embedding impedances; large-signal PIN diode model; tunnelling; ultra-fast photodetection; ultra-fast photodetectors; ultra-fast superlattice photodiodes; Avalanche photodiodes; Charge carrier processes; Circuit simulation; Equations; Frequency; Impedance; PIN photodiodes; Photodetectors; Signal generators; Superlattices;
Conference_Titel :
Microwave Conference, 2005 European
Print_ISBN :
2-9600551-2-8
DOI :
10.1109/EUMC.2005.1610152
