DocumentCode :
453673
Title :
A new structure of low-noise CMOS differential amplifier
Author :
Lan, Wei ; Gao Jim ; Zhongjian, Chen ; Lijiu, Ji
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
1
fYear :
2005
fDate :
24-27 Oct. 2005
Firstpage :
360
Lastpage :
364
Abstract :
A new structure of low-noise CMOS differential amplifier has been presented in this paper. The structure is mainly based on a load of common-gate MOSFETs with resistances in series at sources (CG-R load), which does not increase complication of the circuit. This structure decreases 1/f noise of the load by a (1 + gm2R) 2 coefficient, while keeps the voltage gain high. The simulation result for the given example reveals an average reduction of 90% for load noise at low frequencies, compared with current-mirror load (CM load).
Keywords :
1/f noise; CMOS analogue integrated circuits; differential amplifiers; integrated circuit noise; 1-f noise; common gate MOSFET; low noise CMOS differential amplifier; Circuit noise; Differential amplifiers; Frequency; Integrated circuit noise; Low-frequency noise; MOSFETs; Noise generators; Noise reduction; Thermal resistance; Voltage; 1/f noise; CMOS; amplifier; differential; low noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2005. ASICON 2005. 6th International Conference On
Print_ISBN :
0-7803-9210-8
Type :
conf
DOI :
10.1109/ICASIC.2005.1611337
Filename :
1611337
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=453673
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