Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors

Author

Ya-Hsiang Tai ; Hao-Lin Chiu ; Lu-Sheng Chou

Author_Institution

Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

9

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

613

Lastpage

618

Abstract

In this work, wafer level TLP testing is applied to amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) to study the factors of their electrostatic discharge (ESD) robustness. Two kinds of TFTs with N₂O and O₂ treatments are subject to the ESD test. It is found that the contact resistance of the TFTs, instead of the channel quality, dominates the ESD power for them to be damaged.

Keywords

amorphous state; contact resistance; electrostatic discharge; gallium compounds; indium compounds; semiconductor device testing; semiconductor materials; thin film transistors; ESD; InGaZnO; TFT; a-IGZO thin film transistors; amorphous indium-gallium-zinc-oxide; contact resistance; diode-connected thin film transistors; electrostatic discharge; transmission line pulsing; wafer level TLP testing; Electrostatic discharges; Logic gates; Robustness; Stress; Testing; Thin film transistors; Amorphous Indium–Gallium–Zinc Oxide thin film transistor (a-IGZO TFT); electrostatic discharge (ESD);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2257680

Filename

6512564